Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.
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Simulation results indicate the importance of the gate-source and gate-drain spacer lengths. The energy conversion efficiency as a function of the incident photon energy and ribbon’s width is evaluated and compared to their nanotube counterparts.
Mahdi Pourfath MSc Dr. The lowest- and the second-lowest band minima in the conduction band of these materials are denoted as K- and Q-valleys. His scientific interests include the numerical study of novel nanoelectronic devices.
The Non-Equilibrium Green’s Function Method for Nanoscale Device Simulation
Computational Single-Electronics Christoph Wasshuber. Other books in this series.
There is a good agreement between simulation and experimental results, indicating the validity purfath the model. Mahdi Pourfath was born in Tehran, Iran, in A small tensile strain has a higher impact on the mobility of materials with pourfqth smaller energy distance between the valleys, such as MoSe 2 and WSe 2. Product details Format Paperback pages Dimensions x x Unstrained mobility and mobility enhancement with a strain strongly depend on the energy distance between the K- and Q-valleys.
Optical Properties of Graphene Nanoribbons.
Erasmus Langer Siegfried Selberherr. Description For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach.
The optical transition matrix elements and the resulting selection rules were also derived. To achieve more realistic results it is necessary to extend the codes to include 3D geometries. Mahdi Pourfath was born in Tehran, Iran, in Visit our Beautiful Books page and find lovely books for kids, photography lovers and more. Tight-binding calculations predict that zigzag GNRs are always metallic, while armchairs can be either metallic or semiconducting, depending on their width.
Mahdi Pourfath MSc Dr. Other 2D materials with a nonzero bandgap, such as single and few-layer transition metal dichalcogenides TMDsoffer promising electrical and optical properties for future electronic applications. Recently, a graphene TFET based on a vertical graphene heterostructure was proposed. In the presence of electric field or optical excitations, which are present in electronic devices, carriers can be driven far from equilibrium.
Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction.
Graphene, a one-atomic carbon sheet with a honeycomb structure, has attracted significant attention due to its unique physical properties. Furthermore, it can be inferred from the results that due to the smaller density of states and the resulting smaller mahdo capacitance of GNRs as compared to graphene, better switching and frequency response can be achieved for VTGNRFETs.
Even in the presence of extrinsic pkurfath sources, madhi gauge factors of these materials are much larger than those reported for most of the materials typically used for strain gauges.
He joined the Institute for Microelectronics in Octoberpourfzth he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. Because the formalism enables rigorous pourfatj of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated.
We have shown that by appropriately selecting the gate-source and gate-drain spacer lengths we can improve not only the ambipolar behavior and static characteristics but also the dynamic characteristics of the device.
dblp: Mahdi Pourfath
Structures that realize this behavior are carbon nanotubes and Graphene NanoRibbons GNRs that impose periodic and zero boundary conditions, respectively, on the transverse electron wave-vector. GNRs have recently attracted much interest as they mahhdi recognized as promising building blocks for nano-electronic devices. Looking for beautiful books? Pourfahh the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs.
The device response was studied for a wide range of photon energies. Our studies pave the way for improving the performance of TMD-based electronic devices by strain engineering. The results indicate that a tensile strain increases mobility, whereas a compressive strain reduces mobility.